ESR 15: Filip Šegmanović

Host Institution: 
ams AG
Radiation-induced defects in silicon sensors. Methodology consists of running TCAD simulations, where I implement trapping mechanisms and similar effects. The goal is to design a radiation-hard sensor.
MSc degree in electrotechnics
Research Interests: 
  • Process & Design improvements of X-ray and NIR sensors
  • Implementation of radiation-induced defects in TCAD simulations
  • Pre-&Post-radiation measurement of sensors to characterize the device

My name is Filip Šegmanović and I am from Zagreb, Croatia. I am working as a fellow researcher at ams AG in Unterpremstätten, Austria. My research is based on investigating radiation induced defects on X-ray sensors for medical applications and NIR sensors for space applications. I studied at the Faculty of electrical engineering and computing in Zagreb, where I did both my bachelor and master thesis' in electrotechnics. In my free time, I like to swim and occasionally I play the guitar.

Research at STREAM: 

I contribute to the STREAM Work Package 4.

Radiation induced defects depend on the type of radiation. There are cumulative irradiation efects like Total Ionizing Dose (TID) and Non-Ionizing-Energy-Loss (NIEL) effect during which different defects and traps are created in the silicon bulk. Using TCAD software, I am implementing those defects into simulations, which I calibrate to the measurements. Apart from that, I have designed a test-chip in ams' 0.18µm technology with multiple photodiodes, which I will measure and characterize before and after irradiation.




Host Institution and Secondment Topic 

Expected secondment period

CERN (Geneva, CH), TCAD simulations

3 weeks in August 2017

R. Boskovic Institute (HR), DLTS measurements

 2 weeks in June 2018


The impact of my research is to have a solid TCAD model which will describe irradiation effects on the silicon sensors.

Also, the main goal is to design a rad-hard sensor, for medical and space applications.

You are here